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APTGF15H120T3G
Full - Bridge NPT IGBT Power Module
13 14
VCES = 1200V IC = 15A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * Each leg can be easily paralleled to achieve a phase leg of twice the current capability * RoHS compliant
Q1 18 19
CR1
CR3
Q3 11 10
22 23 Q2
7 8 CR4 Q4
26 27
CR2
4 3
29 15
30
31 R1
32 16
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
Reverse Bias Safe Operating Area
30A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF15H120T3G - Rev 1
Max ratings 1200 25 15 60 20 140
Unit V A V W
July, 2006
APTGF15H120T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Test Conditions Min Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy VGE = 0V VCE = 1200V Tj = 25C Tj = 125C Tj = 25C VGE =15V IC = 15A Tj = 125C VGE = VCE, IC = 1mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =15A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 15A R G = 33 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 15A R G = 33 VGE = 15V Tj = 125C VBus = 400V IC = 15A Tj = 125C R G = 33 Typ Max 250 500 3.7 6 400 Typ 1000 150 70 99 10 70 60 50 315 30 60 50 356 40 2 mJ 1 Max Unit A V V nA Unit pF
2.5 4
3.2 4.0
Dynamic Characteristics
Min
nC
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr Er
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C IF = 15A VR = 600V
di/dt =1000A/s
Min 1200
Typ
Max 250 500
Unit V A A V ns C mJ
July, 2006 2-6 APTGF15H120T3G - Rev 1
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1200V
IF = 15A VGE = 0V
15 2.1 1.9 95 190 1.5 3.1 0.5 1.2
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
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APTGF15H120T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt
Thermal and package characteristics
Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
Min
Typ
Max 0.9 2.0 150 125 100 4.7 110
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol < 1mA, 50/60Hz
To heatsink
M4
2500 -40 -40 -40 2.5
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTGF15H120T3G - Rev 1
July, 2006
17
28
APTGF15H120T3G
Typical Performance Curve
70 Ic, Collector Current (A) 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE , Gate to Emitter Voltage (V)
250s Pulse Test < 0.5% Duty cycle
Output characteristics (VGE=15V) Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle
16 14 12 10 8 6 4 2 0
8
Output Characteristics (VGE =10V)
250s Pulse Test < 0.5% Duty cycle TJ=25C
TJ=25C
T J=125C
TJ=125C
0
0.5
1
1.5
2
2.5
3
3.5
V CE, Collector to Emitter Voltage (V) Gate Charge
IC = 15A TJ = 25C V CE =240V V CE =600V
70
Ic, Collector Current (A)
18 16 14 12 10 8 6 4 2 0 0
60 50 40 30 20 10 0 0
V CE =960V
T J=125C TJ=25C
2.5 5 7.5 10 12.5 V GE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 125C 250s Pulse Test < 0.5% Duty cycle
15
20
40
60
80
100
120
Gate Charge (nC) On state Voltage vs Junction Temperature
VCE, Collector to Emitter Voltage (V)
V CE, Collector to Emitter Voltage (V)
9 8 7 6 5 4 3 2 1 0 9
6 5 4 3 2 1 0 -50 -25 0 25 50 75 100 TJ, Junction Temperature (C) 125 Ic=7.5A
250s Pulse Test < 0.5% Duty cycle V GE = 15V
Ic=30A Ic=15A
Ic=30A
Ic=15A
Ic=7.5A
10
11
12
13
14
15
16
VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized)
1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 TJ, Junction Temperature (C) 125
Ic, DC Collector Current (A)
40 35 30
DC Collector Current vs Case Temperature
20 15 10 5 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C)
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APTGF15H120T3G
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns)
VCE = 600V RG = 33
Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns)
75 70 65 60 55 50 0 5 10 15 20 25 30 35 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current
400
VGE=15V, TJ=125C
350
V GE = 15V
300
V GE=15V, TJ=25C
250
VCE = 600V RG = 33
200 0 5 10 15 20 25 30 35
ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
160
V CE = 600V R G = 33
50 45
tf, Fall Time (ns)
TJ = 125C
tr, Rise Time (ns)
120
40 35 30 25
TJ = 25C
80
VGE=15V
40
VCE = 600V, V GE = 15V, R G = 33
0 0 5 10 15 20 25 30 35
ICE, Collector to Emitter Current (A) Turn-On Energy Loss vs Collector Current
V CE = 600V RG = 33
20 0 5 10 15 20 25 30 ICE, Collector to Emitter Current (A) 35
Eon, Turn-On Energy Loss (mJ)
Eoff, Turn-off Energy Loss (mJ)
8 7 6 5 4 3 2 1 0 0
Turn-Off Energy Loss vs Collector Current 2.5
TJ=125C, VGE=15V
2 1.5 1 0.5 0 0
V CE = 600V V GE = 15V RG = 33
TJ = 125C
TJ=25C, V GE=15V
TJ = 25C
5 10 15 20 25 30 ICE, Collector to Emitter Current (A)
35
5 10 15 20 25 30 ICE, Collector to Emitter Current (A)
Reverse Bias Safe Operating Area
35
Switching Energy Losses (mJ)
8 7 6 5 4 3 2 1 0
Switching Energy Losses vs Gate Resistance
V CE = 600V VGE = 15V TJ= 125C
Eon, 15A
35
IC , Collector Current (A)
30 25 20 15 10 5 0 0 400 800 1200
Eoff, 15A
Gate Resistance (Ohms)
VCE, Collector to Emitter Voltage (V)
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APTGF15H120T3G - Rev 1
0
20
40
60
80
100
120
July, 2006
APTGF15H120T3G
Fmax, Operating Frequency (kHz) Capacitance vs Collector to Emitter Voltage 10000 Operating Frequency vs Collector Current 120 100 80 60 40 20 0 0 5 10 15 20 IC, Collector Current (A) 25
Hard switching ZCS ZVS VCE = 600V D = 50% RG = 33 TJ = 125C TC= 75C
C, Capacitance (pF)
Cies 1000
Coes 100 Cres 10 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 50
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.9 0.8 0.7 0.6 0.5 0.4 0.2 0.3 Single Pulse 0.1
0.05 0 0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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